Solid-state imaging device, imaging apparatus, and method of manufacturing solid-state imaging device

ABSTRACT

The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield. A solid-state imaging device including: a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array; and a stacked body formed by stacking a plurality of layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices; a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface; and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has a plurality of structures at a height generally equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.

TECHNICAL FIELD

The present invention relates to a solid-state imaging device, animaging apparatus, and a method of manufacturing a solid-state imagingdevice.

BACKGROUND ART

In recent years, miniaturization and increase in the number of pixels ofsolid-state imaging devices mounted in digital cameras and the like havebeen underway as pixels are made fine. Owing to this, the tendency toreduce the area of a photoelectric conversion section in each pixel hasbeen accelerated and the total amount of light incident on onephotoelectric conversion section has been reduced more greatly thanbefore. Thus, it is essential to enabling the light to be incident onthe photoelectric conversion section to be introduced to thephotoelectric conversion section without waste for the purpose ofmaintaining and improving the sensitivity of an imaging device.

To improve light condensing efficiency for efficiently introducing thelight incident on each pixel to the photoelectric conversion element,therefore, a multi-lens structure in which in-layer lenses (alsoreferred to as “inner lenses”) are formed on a lower layer of pastprovided on-chip lenses (between the layer of the on-chip lenses and asemiconductor substrate having photodiodes) has been in the mainstreamas a structure of the solid-state imaging device (refer to, for example,PTL 1).

The in-layer lens is formed with a transparent material having a higherrefractive index value than that of a peripheral material. Providing thein-layer lens produces not only an effect of improving the sensitivitybut also an effect of reducing stray light that causes flare as a resultof condensing light that has been incident on the periphery of a lightshielding section formed on the surface of one photoelectric conversionsection to neighborhoods of the center of the photoelectric conversionsection by the in-layer lens.

CITATION LIST Patent Literature PTL 1

Japanese Patent Laid-Open No. 2015-029011

SUMMARY Technical Problem

To stack color filters and on-chip lenses similar to those provided paston an upper layer than the in-layer lenses, a planarization film isprovided immediately on the in-layer lenses to provide a planar surfaceand the color filters and the on-chip lenses are then stacked on thesurface. Specifically, an oxide film is stacked on the in-layer lensesat a thickness to such an extent that a stacking height of the oxidefilm relative to a base portion of each in-layer lens is larger than aheight of the in-layer lens, and a planarization process is performed tosubject a surface of this oxide film to polishing and grinding by anapproach such as chemical mechanical polishing (CMP) and to eliminateirregularities on the surface of the oxide film.

However, it is difficult to completely eliminate a step on the surfaceof the planarization film near a boundary between an imaging deviceregion where the in-layer lenses are present and regions (including, forexample, a peripheral circuit region and a scribe region) where thein-layer lenses are not present, and a downward slope step remains fromwithin the imaging device region to the regions other than the imagingdevice region across the boundary of the imaging device region in theordinary planarization process.

This downward slope step possibly extends into the imaging device regionwhere the photoelectric conversion sections are present. Owing to this,on-chip lenses near the boundary of the imaging device are formed on thedownward slope step, and on-chip lenses in a central portion of theimaging device region are formed on sites without the downward slopestep. As a result, a variation occurs in light condensingcharacteristics among the on-chip lenses formed within the same imagingdevice region. In other words, the on-chip lenses are normally designedon the premise that there is no such a step, and a focus of incidentlight passing through each of the on-chip lenses provided on the slopesdeviates from a designed focus, possibly resulting in deterioration ofchip characteristics.

Needless to say, there is a possibility that the step can be mitigatedby increasing a stacking amount of the oxide film to increase thethickness of the oxide film and increasing a thickness by which theoxide film is polished and ground in the planarization process. However,increasing the thickness of the oxide film leads to increases in avariation in the thickness of the oxide film and in a polishing amount,possibly resulting in a greater variation in the light condensingcharacteristics among the chips. Furthermore, increasing the stackingthickness of the oxide film leads to increases in polishing and grindingamounts and an increase in film formation dust generated during a seriesof the planarization process to increase deposits in a film formingchamber, and the falling and adhesion of the film formation dust onto asurface of the imaging device from an inner wall of an apparatus,possibly resulting in reduction of yield. Furthermore, performingpolishing on the imaging device with the film formation dust falling andadhering onto the surface of the imaging devices causes scratches.Moreover, increasing the polishing and grinding amounts by increasingthe stacking thickness of the oxide film disadvantageously causesincreases in processing time and load on the apparatus.

The present technology has been achieved in the light of the problemsabove, and an object of the present technology is to suppress thedeterioration of light condensing characteristics of an overall deviceresulting from providing in-layer lenses while preventing thedeterioration of device characteristics of the solid-state imagingdevice and reduction of yield.

Solution to Problem

One aspect of the present technology is a solid-state imaging deviceincluding: a semiconductor substrate on which a plurality ofphotoelectric conversion devices are arranged in an imaging deviceregion in a two-dimensional array; and a stacked body formed by stackinga plurality of layers on the semiconductor substrate, in which thestacked body includes an in-layer lens layer that has in-layer lenseseach provided at a position corresponding to each of the photoelectricconversion devices; a planarization layer that is stacked on thein-layer lens layer and that has a generally planarized surface; and anon-chip lens layer that has on-chip lenses each provided at a positioncorresponding to each of the photoelectric conversion devices, and thein-layer lens layer has a plurality of structures at a height generallyequal to a height of the in-layer lenses, the plurality of structuresbeing provided on an outside of the imaging device region.

Furthermore, one aspect of the present technology is an imagingapparatus including: a solid-state imaging device; and a signalprocessing circuit that processes a signal from the solid-state imagingdevice, in which the solid-state imaging device includes a semiconductorsubstrate on which a plurality of photoelectric conversion devices arearranged in an imaging device region in a two-dimensional array; and astacked body formed by stacking a plurality of layers on thesemiconductor substrate, the stacked body includes an in-layer lenslayer that has in-layer lenses each provided at a position correspondingto each of the photoelectric conversion devices; a planarization layerthat is stacked on the in-layer lens layer and that has a generallyplanarized surface; and an on-chip lens layer that is an upper layerthan the planarization layer and that has on-chip lenses each providedat a position corresponding to each of the photoelectric conversiondevices, and the in-layer lens layer has a plurality of structures at aheight generally equal to a height of the in-layer lenses, the pluralityof structures being provided on an outside of the imaging device region.

Moreover, one aspect of the present technology is a method ofmanufacturing a solid-state imaging device, including: a first step offorming a plurality of photoelectric conversion devices in an imagingdevice region of a semiconductor substrate in a two-dimensional array;and a second step of forming a plurality of layers by stacking onanother on the semiconductor substrate, in which the second stepincludes: a step of forming an in-layer lens layer that has in-layerlenses each at a position corresponding to each of the photoelectricconversion devices; a step of forming a planarization layer having agenerally planarized surface on the in-layer lens layer; and a step offorming an on-chip lens layer that is an upper layer than theplanarization layer and that has on-chip lenses each at a positioncorresponding to each of the photoelectric conversion devices, and inthe step of forming the in-layer lens layer, a plurality of structuresat a height generally equal to a height of the in-layer lenses areformed on an outside of the imaging device region.

It is to be noted that the solid-state imaging device and the imagingapparatus described above include various kinds of aspects includingimplementation in a state of being incorporated into the other apparatusor system and implementation together with other methods. Furthermore,the method of manufacturing the solid-state imaging device describedabove can be implemented as part of the other methods or realized as acontrol program controlling a solid-state imaging device manufacturingapparatus or a solid-state imaging device manufacturing system equippedwith means corresponding to the steps, a computer readable recordingmedium recording the control program, and the like.

Advantageous Effect of Invention

According to the present technology, in a solid-state imaging device, itis possible to suppress occurrence of a variation in light condensingcharacteristics among the on-chip lenses resulting from providing thein-layer lenses while preventing the deterioration of the devicecharacteristics and the reduction of yield. The effects described in thepresent specification are given as an example only, and the effects arenot limited to those described in the present specification and mayinclude additional effects.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a view depicting a planar configuration of a solid-stateimaging device according to a first embodiment.

FIG. 2 is a view schematically depicting principal parts of a sectiontaken along an X-X cross-section depicted in FIG. 1.

FIG. 3 is a view depicting a projection shape of in-layer lenses.

FIG. 4 is a view depicting an example of a projection shape ofstructures.

FIG. 5 is a view depicting another example of the projection shape ofthe structures.

FIG. 6 is a view depicting another example of the projection shape ofthe structures.

FIG. 7 is a view depicting another example of the projection shape ofthe structures.

FIG. 8 is a view depicting another example of the projection shape ofthe structures.

FIG. 9 is a view depicting another example of the projection shape ofthe structures.

FIG. 10 is a view depicting an example of an array of the structures.

FIG. 11 is a view depicting another example of the array of thestructures.

FIG. 12 is a view depicting another example of the array of thestructures.

FIG. 13 is a view depicting another example of the array of thestructures.

FIG. 14 is a view depicting another example of the array of thestructures.

FIG. 15 is a view depicting another example of the array of thestructures.

FIG. 16 is a view depicting another example of the array of thestructures.

FIG. 17 is a view illustrating a formation range of the structures nearan edge portion of the solid-state imaging device.

FIG. 18 is a view illustrating sites which are other than an imagingdevice region and where no structures are provided.

FIG. 19 is a block diagram depicting an electrical configuration of thesolid-state imaging device.

FIG. 20 is a view illustrating a circuit configuration of the pixel.

FIG. 21 is a view depicting a configuration of an AD conversion section.

FIG. 22 is a view depicting an example of a method of manufacturing thesolid-state imaging device.

FIG. 23 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 24 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 25 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 26 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 27 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 28 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 29 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 30 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 31 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 32 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 33 is a view depicting an example of the method of manufacturingthe solid-state imaging device.

FIG. 34 is a block diagram depicting a configuration of an imagingapparatus including the solid-state imaging device.

FIG. 35 is a view depicting an example of a schematic configuration ofan endoscopic surgery system.

FIG. 36 is a block diagram depicting an example of a functionalconfiguration of a camera head and a camera control unit (CCU).

FIG. 37 is a block diagram depicting an example of schematicconfiguration of a vehicle control system.

FIG. 38 is a diagram of assistance in explaining an example ofinstallation positions of an outside-vehicle information detectingsection and an imaging section.

DESCRIPTION OF EMBODIMENTS

The present technology will be described in accordance with thefollowing order.

(A) First embodiment:

(B) Second embodiment:

(C) Third embodiment:

(D) Example of application to endoscopic surgery system:

(E) Example of application to mobile body:

(A) First Embodiment

FIG. 1 is a view depicting a planar configuration of a solid-stateimaging device 100 according to the present embodiment. The solid-stateimaging device 100 receives light incident from a subject, performsphotoelectric conversion on the light, and outputs an electrical signalin response to an amount of the light.

It is to be noted that a type of the solid-state imaging device 100 isnot limited to a specific type and may be a surface irradiation type ora back irradiation type. Furthermore, the solid-state imaging device 100may be any of a complementary metal oxide semiconductor (CMOS), a chargecoupled device (CCD), and other types. In a case of the surfaceirradiation type solid-state imaging device, an interconnection layer20, to be described later, is formed between a semiconductor substrate10 and an in-layer lens layer 40 to be described later. It is to benoted that the solid-state imaging device 100 will be described whiletaking a back irradiation type CMOS image sensor by way of example.

The solid-state imaging device 100 has an imaging device region R1, aperipheral circuit region R2, and a scribe region R3. Marks used forlithographic positioning and the like are provided in these regions asneeded.

The imaging device region R1 is a region where photoelectric conversiondevices are provided and is generally rectangular. The peripheralcircuit region R2 is a region where peripheral circuits of thesolid-state imaging device 100 are provided and which is provided into aframe shape in such a manner as to surround the imaging device regionR1. The scribe region R3 is a site left in an edge portion of thesolid-state imaging device 100 after a wafer on which a plurality ofsolid-state imaging devices 100 are simultaneously formed is cut intothe solid-state imaging devices 100 by dicing at a time of dividing thewafer into the solid-state imaging devices 100, and is a region providedinto a frame shape in such a manner as to surround the peripheralcircuit region R2. While a test element group (TEG) region is oftenprovided in the scribe region R3, the TEG region is cut and separated byscribing and does not, therefore, remain in the solid-state imagingdevice 100.

FIG. 2 is a view schematically depicting principal parts on a sectiontaken along an X-X cross-section depicted in FIG. 1. The solid-stateimaging device 100 has one or a plurality of layers formed on each of afront surface 10F and a rear surface 10R of the semiconductor substrate10. These layers are formed by, for example, a chemical vapor depositionmethod, a physical vapor deposition method, a coating method such as aspin coating method, lithography, or adhesion of a supporting substrate,a peripheral circuit substrate manufactured separately, and the like.

In FIG. 2, the solid-state imaging device 100 has the interconnectionlayer 20 stacked on the front surface 10F of the semiconductor substrate10, and a stacked body 30 stacked on the rear surface 10R of thesemiconductor substrate 10. The stacked body 30 has an in-layer lenslayer 40, a planarization layer 50, a color filter layer 60, and anon-chip lens layer 70 in an ascending order of distance to thesemiconductor substrate 10. Other layers may be stacked between thelayers (the in-layer lens layer 40, the planarization layer 50, thecolor filter layer 60, and the on-chip lens layer 70) of the stackedbody 30.

A plurality of photodiodes PD serving as the photoelectric conversiondevices are provided side by side within the imaging device region Ralong the rear surface 10R of the semiconductor substrate 10. Althoughnot depicted in FIG. 2, pixel transistors (a transfer transistor, areset transistor, an amplification transistor, a selection transistor)are also provided within the imaging device region R1 along the frontsurface 10F of the semiconductor substrate 10. Basically, the pixeltransistors are provided in each pixel. It is noted, however, that in acase of a floating diffusion (FD) sharing scheme of sharing an FD amonga plurality of pixels, the transfer transistor is provided in each pixelbut the other pixel transistors are provided per FD.

The semiconductor substrate 10 is connected to a peripheral circuit viapixel driving lines and vertical signal lines that configure theinterconnection layer 20 stacked on the front surface 10F of thesemiconductor substrate 10. The peripheral circuits are configured withpart of or all of a vertical driving section 122, an analog-digitalconversion section 123 (AD conversion section 123), a reference signalgeneration section 124, a horizontal driving section 125, acommunication/timing control section 126, and a signal processingsection 127. The peripheral circuits are formed in the peripheralcircuit region R2 provided on an outside of the imaging device region R1and/or the peripheral circuit substrate adhering onto a rear surface ofthe interconnection layer 20.

The in-layer lens layer 40 is stacked on the rear surface 10R of thesemiconductor substrate 10 via an insulating layer and the like, whichare not depicted. The in-layer lens layer 40 in the imaging deviceregion R1 has a plurality of in-layer lenses 41. The in-layer lenses 41are each provided at a position corresponding to a position of each ofthe photodiodes PD (in a position relationship in which each in-layerlens 41 overlaps each photodiode PD at least partially in a plan view ofthe solid-state imaging device 100). In other words, the in-layer lenses41 are provided with regularity similar to that of an array of thephotodiodes PD. Each of the in-layer lenses 41 has, for example, a shapeof a convex lens protruding in a knoll shape from a surface thereof thatdoes not face the semiconductor substrate 10 as depicted in FIG. 3. Thein-layer lens layer 40 has a higher refractive index than 1.4 to 1.6which is a refractive index of a material normally used as optical pathsof the planarization layer 50 and the like stacked on the in-layer lenslayer 40 and is preferably equal to or higher than 1.8.

The in-layer lens layer 40 in the regions (the peripheral circuit regionR2 and the scribe region R3) other than the imaging device region R1 hasa plurality of structures 42. The structures 42 are each provided at aposition that does not correspond to the position of each of thephotodiodes PD (position at which each structure 42 does not overlapeach photodiode PD in the plan view of the solid-state imaging device100), and provided at a height generally equal to that of the in-layerlenses 41. Each of the structures 42 is formed as a projectionprotruding toward a side that does not face the semiconductor substrate10. A shape and a distribution of the structures 42 will be describedlater.

On the in-layer lens layer 40, the planarization layer 5 including amaterial having a lower refractive index than that of the in-layer lenslayer 40 and having a generally planarized surface is stacked at athickness enough to bury and cover an entire irregular shape of thein-layer lens layer 40 over entire surfaces of the imaging device regionR1 and the regions other than the imaging device region R1. Since theplanarization layer 50 is formed to be closely attached to the entireirregular surface of the in-layer lens layer 40, a layer boundarybetween the planarization layer 50 having the low refractive index andthe in-layer lenses 41 having the high refractive index is formedbetween the in-layer lenses 41 and the planarization layer 50.

The color filter layer 60 is stacked on the planarization layer 50 inthe imaging device region R1. In the color filter layer 60, a pluralityof color filters 61 of three primary colors of red, green, and bluegenerally at the same height are provided at positions corresponding tothe positions of the respective photodiodes PD (in a positionrelationship in which the color filters 61 overlap the photodiodes PD inthe plan view of the solid-state imaging device 100) in, for example, aBayer array. It is to be noted that the color filters 61 are not limitedto those of the three primary colors of light and color filters ofcomplementary colors may be used or a combination of the color filtersand white color filters can be used as the color filters 61. Anadditional planarization layer may be stacked on the color filter layer60 as needed.

The on-chip lens layer 70 is stacked on the color filter layer 60 in theimaging device region R1. The on-chip lens layer 70 has a plurality ofon-chip lenses 71 each provided, for example, to correspond to theposition of each of the color filters 61. The on-chip lenses 71 areformed using, for example, a high refractive index inorganic film suchas a silicon nitride film (SiN film) and can be formed by an etch-backmethod. A refractive index of SiN is approximately 1.9.

Shapes and planar arrays of the in-layer lenses 41 and the structures 42will next be described.

The in-layer lenses 41 have the knoll projection shape depicted in, forexample, FIG. 3 as described above, and function as light condensinglenses that condense light incident through the upper layers includingthe on-chip lens layer 70 and the color filter layer 60 and that emitthe condensed light toward the photodiodes PD. On the other hand, thestructures 42 are projections at the same height as that of the in-layerlenses 41 and protruding in the same direction as that of the in-layerlenses 41 regardless of a shape and a light condensing function. Inother words, the structures 42 may have a knoll-shape similar to that ofthe in-layer lenses 41 or may have a different shape from that of thein-layer lenses 41.

FIGS. 4 to 16 depict specific examples of the shape and an array of thestructures 42.

FIG. 4 is a view depicting an example of a projection shape of thestructures 42. A base portion of each structure 42 depicted in FIG. 4 isgenerally rectangular and the structure 42 has a projection shapebulging from the base portion in a hilly fashion. In a case in which alength of a side of the base portion of this rectangular hillyprojection is equal to a diameter of a base portion of the knoll-shapedprojection, a coverage that indicates an occupation range of thestructure 42 that is the rectangular hilly projection having the baseportion in each pixel region is higher than that of the in-layer lens 41that is the knoll-shaped projection having the base portion. Needless tosay, in a case in which a shape of the pixel region is other than arectangular shape, for example, a hexagonal shape (for example, in acase of adopting a honeycomb structure), the shape of the base portionis preferably a hexagonal hilly projection shape to be fit to the shapeof the pixel region. It is to be noted that the shape of the baseportion of each structure 42 is not necessarily uniform and acombination of the structures 42 having different base portion shapesmay be arranged in an array as appropriate.

FIG. 5 is a view depicting another example of the projection shape ofthe structures 41. Each of the structures 42 depicted in FIG. 5 is alinear projection having a semicylindrical projection provided on a wideand long linear base portion into a barrel shape. In other words, thestructure 42 has a shape similar to a cylindrical lens. A coverage ofthe linear projection structure 42 is high, as compared with thestructures 42 having circular or rectangular base portions. It is to benoted that the base portion shape of the linear projection structure 42is not limited to the linear shape but may be, for example, a curvedshape having a curvature halfway along the base portion or a crank-likeshape having one or a plurality of bends halfway along the base portiondepicted in FIGS. 6 to 9.

FIG. 10 is a view depicting an example of the array of the structures42. The structures 42 depicted in FIG. 10 are provided at pitchesgenerally equivalent to those of the in-layer lenses 41. Making thepitches of the structures 42 generally equivalent to those of thein-layer lenses 41 facilitates a design related to arrays of thein-layer lenses 41 and the structures 42. Furthermore, to improveplanarity of the planarization layer 50 near a boundary between theimaging device region R1 and the other regions to be described in amethod of manufacturing to be described later, it is preferable that acoverage of the in-layer lenses 41 of the in-layer lens layer 40 in theimaging device region R1 is close to those of the structures 42 of thein-layer lens layer 40 in the regions other than the imaging deviceregion R1. However, a design for adjusting a size of each structure 42is easier than a design for adjusting a distribution density of thestructures 42, and a design for making the coverage of the in-layer lens41 close to that of the structure 42 is easy to make.

FIGS. 11 to 16 are views depicting other examples of the array of thestructures 42. The structures 42 depicted in FIGS. 11 to 16 are providedat pitches different from those of the in-layer lenses 41. Specifically,in the examples depicted in FIGS. 11 and 12, the array is such thatformation pitches of the structures 42 gradually change in a transversedirection in FIGS. 11 and 12. In the examples depicted in FIGS. 13 and14, the array is such that formation pitches of the structures 42gradually change in a vertical direction in FIGS. 13 and 14. In theexamples depicted in FIGS. 15 and 16, the array is such that thestructures 42 provided at constant pitches as depicted in FIG. 10 arethinned out at regular intervals. Needless to say, the structures 42 maybe provided in an array that is an appropriate combination of the arraysdepicted in FIGS. 11 to 16. Changing array pitches of the structures 42makes it possible to suppress occurrence of flare and the like. This isbecause in a case in which reflected light generated in the solid-stateimaging device 100 reaches an outside of the imaging device region Rwhere the in-layer lens layer 40 is provided and is reflected by thestructures 42, it is difficult for the reflected light to possessregularity.

FIG. 17 is a view illustrating a formation range of the structures 42near the edge portion of the solid-state imaging device 100. In theexample depicted in FIG. 17, the structures 42 are provided in thein-layer lens layer 40 generally uniformly in almost entirety of theregions (the peripheral circuit region R2 and the scribe region R3)other than the imaging device region R1. It is to be noted that theshape of the structures 42 depicted in FIG. 17 is an example and thatformation pitches and the numbers of the in-layer lenses 41 and thestructures 42 are depicted schematically.

Furthermore, the projections as the in-layer lenses 41 and thestructures 42 are formed generally entirely in the in-layer lens layer40. Attention is paid in particular so that regions without theprojections are not formed near the boundary between the imaging deviceregion R1 and the other regions. The region without the projections isassumed, for example, as a region where no in-layer lenses 41 orstructures 42 are provided in a range equal to or wider than 60 to 400μm, preferably a region where no in-layer lenses 41 or structures 42 areprovided in a range equal to or wider than 100 to 400 μm, morepreferably a region where no in-layer lenses 41 or structures 42 areprovided in a range equal to or wider than 200 to 400 μm, further morepreferably a region where no in-layer lenses 41 or structures 42 areprovided in a range equal to or wider than 300 to 400 μm. Not providingthe regions without the projections enables realization of a structurethat makes it difficult to form a downward slope step near the boundarybetween the imaging device region R1 and the other regions at a time offorming the planarization layer 50 as described in the method ofmanufacturing the solid-state imaging device 100 to be described later.

Furthermore, while the solid-state imaging device 100 has a scribedsection formed by dicing along a scribe line in an edge portion Ethereof, cross-sections of not only the in-layer lenses 41 but also thestructures 42 do not appear on this scribed section. In other words, thein-layer lenses 41 and the structures 42 are not provided immediately onthe scribed section. Owing to this, at a time of an inspection fordetermining whether the scribed section is a failure or no-failure,there is no probability that cross-sectional structures of the in-layerlenses 41 and the structures 42 appearing on the scribed section areerroneously determined as a failure.

FIG. 18 is a view illustrating sites which are other than the imagingdevice region R1 and where no structures 42 are provided. The stackedbody 30 contains sites provided with marks M on a lower layer than thein-layer lens layer 40. As depicted in FIG. 18, the structures 42 arenot provided in the sites having the marks M provided on the lowerlayer. Examples of the positioning marks M include alignment marks usedat a time of forming color filters, alignment marks used at a time offorming on-chip lenses, and an input/output pad formed on theinterconnection layer 20. A through-hole that penetrates the stackedbody 30 and the semiconductor substrate 10 and that communicate with thestacked body 30 and the semiconductor substrate 10 reaches theinput/output pad, and an inspection such as an operation check of theperipheral circuits is conducted by inserting a probe into thisthrough-hole to bring the probe into contact with the pad. Not providingthe structures 42 in the sites where the positioning marks M areprovided can prevent the structures 42 from disturbing detection of thepositioning marks M in a process of performing layer forming and thelike while performing positioning of upper and lower layers of thein-layer lens layer 40 after forming the in-layer lens layer 40.

FIG. 19 is a block diagram depicting an electrical configuration of thesolid-state imaging device 100. It is to be noted that a CMOS imagesensor that is a type of X-Y address type solid-state imaging apparatuswill be described as the solid-state imaging apparatus by way of examplein the present embodiment. Needless to say, a CCD image sensor may beadopted. A specific example of the solid-state imaging apparatus that isthe CMOS image sensor will be described hereinafter while referring toFIG. 19.

In FIG. 19, the solid-state imaging device 100 includes a pixel section121, a vertical driving section 122, an AD conversion section 123, areference signal generation section 124, a horizontal driving section125, a communication/timing control section 126, and a signal processingsection 127.

A plurality of pixels PXL each including a photodiode that serves as aphotoelectric conversion section are disposed in a two-dimensionalmatrix in the pixel section 121. A color filter array having filters thecolors of which are classified to correspond to the pixels is providedon a light-receiving surface of the pixel section 121. It is to be notedthat a specific circuit configuration of the pixel PXL will be describedlater.

In the pixel section 121, n pixel driving lines HSLn (n=1, 2, . . . )and m vertical signal lines VSLm (m=1, 2, . . . ) are arranged. Thepixel driving lines HSLn are arranged along a transverse direction ofFIG. 19 (pixel array direction of pixel rows/horizontal direction) anddisposed equidistantly in a vertical direction of FIG. 19. The verticalsignal lines VSLm are arranged along the vertical direction of FIG. 19(pixel array direction of pixel columns/perpendicular direction) anddisposed equidistantly in the transverse direction of FIG. 19.

One end of each pixel driving line HSLn is connected to an outputterminal corresponding to each row of the vertical driving section 122.Each vertical signal line VSLm is connected to the pixels PXL in eachcolumn and one end thereof is connected to the AD conversion section123. The vertical driving section 122 and the horizontal driving section125 exercise control to sequentially read analog signals from the pixelsPXL configuring the pixel section 121 under control of thecommunication/timing control section 126. It is to be noted thatspecific connection of the pixel driving line HSLn and the verticalsignal line VSLm to each pixel PXL as well as the pixel PXL will bedescribed later.

The communication/timing control section 126 includes, for example, atiming generator and a communication interface. The timing generatorgenerates various clock signals on the basis of a clock (master clock)input from an outside. The communication interface receives data givenfrom the outside of the solid-state imaging device 100 and associatedwith issuing a command of an operation mode, and outputs data containinginternal information about the solid-state imaging device 100 to theoutside.

The communication/timing control section 126 generates a clock at thesame frequency as that of the master clock, a clock by frequencydivision of the clock by half, a low speed clock by further frequencydivision, and the like on the basis of the master clock, and suppliesthe clocks to the sections (vertical driving section 122, the horizontaldriving section 125, the AD conversion section 123, the reference signalgeneration section 124, the signal processing section 127, and the like)in the solid-state imaging device.

The vertical driving section 122 is configured with, for example, ashift register and an address decoder. The vertical driving section 122includes a vertical address setting section for controlling a rowaddress on the basis of a signal obtained by decoding a video signalinput from the outside and a row scanning control section forcontrolling row scanning.

The vertical driving section 122 can perform read scanning and sweepscanning. The read scanning is scanning for sequentially selecting unitpixels subjected to signal reading. The read scanning is basicallyperformed sequentially in units of rows. In a case of thinning outpixels by summation or summation averaging of outputs from a pluralityof pixels having a predetermined position relationship, the readscanning is performed in a predetermined order.

The sweep scanning is scanning for resetting unit pixels in a row or acombination of pixels subjected to reading ahead of this read scanningperformed on the row or the combination of pixels subjected to readingby the read scanning by as much as time of a shutter speed.

The horizontal driving section 125 selects ADC circuits configuring theAD conversion section 123 in sequence synchronously with the clockoutput from the communication/timing control section 126. The ADconversion section 123 includes the ADC circuits (m=1, 2, . . . )provided to correspond to the vertical signal lines VSLm, converts ananalog signal output from each vertical signal line VSLm into a digitalsignal, and outputs the digital signal to a horizontal signal line Ltrfin accordance with control of the horizontal driving section 125.

The horizontal driving section 125 includes, for example, a horizontaladdress setting section and a horizontal scanning section. Thehorizontal address setting section 125 selects one of the ADC circuits,which corresponds to a column subjected to reading in the horizontaldirection specified by the horizontal address setting section, in the ADconversion section 123, thereby introducing the digital signal generatedby the selected ADC circuit to the horizontal signal line Ltrf.

The digital signal output from the AD conversion section 123 in this wayis input to the signal processing section 127 via the horizontal signalline Ltrf. The signal processing section 127 performs a process forconverting the signals output from the pixel section 121 by way of theAD conversion section 123 into image signals corresponding to a colorarrangement of the color filter array using an arithmetic process.

Furthermore, the signal processing section 127 performs a process forthinning out pixel signals in the horizontal direction or the verticaldirection by summation, summation averaging, or the like as needed. Theimage signals generated in this way are output to the outside of thesolid-state imaging device 100.

The reference signal generation section 124 includes a digital analogconverter (DAC), and generates a reference signal Vramp synchronouslywith a count clock supplied from the communication/timing controlsection 126. The reference signal Vramp is a sawtooth wave (rampwaveform) changing stepwise over time from an initial value suppliedfrom the communication/timing control section 126. This reference signalVramp is supplied to each of the ADC circuits in the AD conversionsection 123.

The AD conversion section 123 includes the plurality of ADC circuits. Inperforming AD conversion on the analog signal output from each pixelPXL, each ADC circuit compares the reference signal Vramp with a voltageof the vertical signal line VSLm using a comparator in predetermined ADconversion periods (a P-phase period and a D-phase period to bedescribed later), and counts time by a counter before or after inversionof a magnitude relationship between the reference signal Vramp and thevoltage of the vertical signal line VSLm (pixel voltage). It is therebypossible to generate the digital signal in response to an analog pixelvoltage. A specific example of the AD conversion section 123 will bedescribed later.

FIG. 20 is a view illustrating a circuit configuration of the pixel.FIG. 20 depicts an equivalent circuit to a pixel of an ordinaryfour-transistor scheme configuration. The pixel depicted in FIG. 20includes a photodiode PD and four transistors (a transfer transistorTR1, a reset transistor TR2, an amplification transistor TR3, and aselection transistor TR4).

The photodiode PD generates a current in response to an amount ofreceived light by photoelectric conversion. An anode of the photodiodePD is connected to a ground and a cathode thereof is connected to adrain of the transfer transistor TR1.

Various control signals are input to the pixel PXL from a reset signalgeneration circuit of the vertical driving section 122 and variousdrivers via signal lines Ltrg, Lrst, and Lsel.

The signal line Ltrg for transmitting a transfer gate signal isconnected to a gate of the transfer transistor TR1. A source of thetransfer transistor TR1 is connected to a connection point at which asource of the reset transistor TR2 is connected to a gate of theamplification transistor TR3. This connection point configures afloating diffusion FD that is a capacitor storing signal charges.

When a transfer signal is input to the gate of the transfer transistorTR1 through the signal line Ltrg, then the transfer transistor TR1 isturned on and transfers the signal charges (photoelectrons in thisexample) accumulated by the photoelectric conversion of the photodiodePD to the floating diffusion FD.

The signal line Lrst for transmitting a reset signal is connected to agate of the reset transistor TR2 and a constant voltage source VDD isconnected to a drain thereof. When the reset signal is input to the gateof the reset transistor TR2 through the signal line Lrst, the resettransistor TR2 is turned on and resets a voltage of the floatingdiffusion FD to a voltage of the constant voltage source VDD. On theother hand, in a case where the reset signal is not input to the gate ofthe reset transistor TR2 through the signal line Lrst, the resettransistor TR2 is turned off and forms a predetermined potential barrierbetween the floating diffusion FD and the constant voltage source VDD.

The amplification transistor TR3 configures a source follower such thatthe gate of the amplification transistor TR3 is connected to thefloating diffusion FD, a drain thereof is connected to the constantvoltage source VDD, and a source thereof is connected to a drain of theselection transistor TR4.

The signal line Lsel for a selection signal is connected to a gate ofthe selection transistor TR4 and a source thereof is connected to thevertical signal line VSLm. When a control signal (an address signal or aselect signal) is input to the gate of the selection transistor TR4through the signal line Lsel, the selection transistor TR4 is turned on.In a case where this control signal is not input to the gate of theselection transistor TR4, the selection transistor TR4 is turned off.

When the selection transistor TR4 is turned on, the amplificationtransistor TR3 amplifies the voltage of the floating diffusion FD andoutputs the amplified voltage to the vertical signal line VSLm. Thevoltage output from each pixel through the vertical signal line VSLm isinput to the AD conversion section 123.

It is to be noted that the circuit configuration of the pixel is notlimited to the configuration depicted in FIG. 20 but any of variouspublicly known configurations such as a three-transistor schemeconfiguration and the other four-transistor scheme configuration can beadopted. Examples of the other four-transistor scheme configurationinclude a configuration such that the selection transistor TR4 isdisposed between the amplification transistor TR3 and the constantvoltage source VDD.

FIG. 21 is a view depicting a configuration of the AD conversion section123. As depicted in FIG. 21, each ADC circuit configuring the ADconversion section 123 includes a comparator 123 a and a counter 123 bprovided per vertical signal line VSLm and a latch 123 c.

The comparator 123 a includes two input terminals T1 and T2 and oneoutput terminal T3. The reference signal Vramp is input to one inputterminal T1 from the reference signal generation section 124, while ananalog pixel signal (hereinafter, referred to as “pixel signal Vvsl”)output from each pixel through the vertical signal line VSLm is input tothe other input terminal T2.

The comparator 123 a compares the reference signal Vramp with the pixelsignal Vvsl. The comparator 123 a is designed to output a high levelsignal or a low level signal in response to a magnitude relationshipbetween the reference signal Vramp and the pixel signal Vvsl, and anoutput from the output terminal T3 is inverted to the high level signalor to the low level signal with a switchover of the magnituderelationship between the reference signal Vramp and the pixel signalVvsl.

The clock is supplied to the counter 123 b from the communication/timingcontrol section 126, and the counter 123 b counts the time from start toend of the AD conversion using the clock. Timing of start of the ADconversion and that of end thereof are identified on the basis of acontrol signal (indicating, for example, whether a clock signal CLK isinput) output from the communication/timing control section 126 andinversion of the output from the comparator 123 a.

Furthermore, the counter 123 b performs the A/D conversion on the pixelsignal by so-called correlated double sampling (CDS). Specifically, thecounter 123 b counts down the time while an analog signal correspondingto a reset component is output from the vertical signal line VSLm undercontrol of the communication/timing control section 126. In addition,using a count value obtained by this countdown as an initial value, thecounter 123 b counts up the time while an analog signal corresponding tothe pixel signal is output from the vertical signal line VSLm.

The count value generated in this way is a digital value correspondingto a difference between a signal component and the reset component. Inother words, the count value is a value obtained by calibrating thedigital value corresponding to the analog pixel signal input to the ADconversion section 123 from each pixel through the vertical signal lineVSLm using the reset component.

The digital value generated by each counter 123 b is stored in the latch123 c, sequentially output from the latch 123 c in accordance withcontrol of the horizontal scanning section, and output to the signalprocessing section 127 via the horizontal signal line Ltrf.

(B) Second Embodiment

FIGS. 22 to 33 are views each depicting an example of a method ofmanufacturing the solid-state imaging device. It is to be noted that amethod of manufacturing the solid-state imaging device as the backirradiation type CMOS image sensor will be described by way of examplein the present embodiment similarly to the first embodiment.

First, as depicted in FIG. 22, constituent elements of a plurality ofunit pixels (STI, photodiodes PD, source regions/drain regions of pixeltransistors, and the like) are formed in the imaging device region R1 ofthe semiconductor substrate 10 from the front surface 10F side of thesemiconductor substrate 10 in a two-dimensional array and in atwo-dimensional matrix by, for example, ion implantation. It is to benoted that FIG. 22 exemplarily depicts only the photodiodes PD. A gateelectrode is stacked on each unit pixel via a gate insulation film.

Next, as depicted in FIG. 23, the interconnection layer 20 in whichinterconnections of a plurality of layers are disposed is stacked on thefront surface 10F of the semiconductor substrate 10 via an interlayerinsulation film. The peripheral circuits such as a logical circuit areformed on the interconnection layer 20 formed on the outside of theimaging device region R1. An interlayer insulation film such as an SiO₂film is stacked on an uppermost surface of the interconnection layer 20,and the surface of the interconnection layer 20 is formed into agenerally planarized surface by planarizing this interlayer insulationfilm by chemical mechanical polishing (CMP).

As depicted in FIG. 24, a supporting substrate 21 is bonded onto thegenerally planarized surface that is the uppermost surface of theinterconnection layer 20 to reinforce the interconnection layer 20. Forexample, a semiconductor substrate of bulk silicon is used as thesupporting substrate 21. It is to be noted that in a case of formingpart of or all of the peripheral circuits on a peripheral circuitsubstrate manufactured separately, the peripheral circuit substrate isbonded onto the surface of the interconnection layer 20 and thesupporting substrate 21 is bonded onto this peripheral circuitsubstrate.

Next, as depicted in FIG. 25, the semiconductor substrate 10 onto whichthe supporting substrate 21 is bonded is turned inside out and the rearsurface 10R of the semiconductor substrate 10 serves as an uppersurface.

Next, as depicted in FIG. 26, removal machining is performed on the rearsurface 10R of the semiconductor substrate 10 to neighborhoods of rearsurfaces of the photodiodes PD by grinding and polishing, as needed.Finally, the rear surface 10R of the semiconductor substrate 10 ismachined into a generally planarized surface by the CMP. It is to benoted that the final machining can be performed by etching.

Next, as depicted in FIG. 27, a high refractive index material forapplication is applied to form a high refractive index layer 40A. Forexample, a siloxane-based material that contains transparent metal oxidefilm fine particles such as TiO_(x) or ZnO_(x) can be used as the highrefractive index material for application. A refractive index of thehigh refractive index material is higher than 1.4 to 1.6 that is therefractive index of the material normally used as optical paths andpreferably equal to or higher than 1.8. For example, spin coating isused for forming the high refractive index layer 40A and an optimumthickness is selected as a thickness of the high refractive index layer40A depending on the height of the in-layer lenses 41 and the structures42.

Next, as depicted in FIG. 28, a resist for forming the in-layer lenses41 and the structures 42 is formed on the high refractive index layer40A. After the resist is formed, a lens pattern is formed by lithographyand a heat treatment (reflow) is carried out, thereby formingknoll-shaped resists 40B in formation sites of the in-layer lenses 41and forming resists 40C of a shape (a rectangular hilly projection shapein FIG. 28) depending on the shape of the structures 42 in formationsites of the structures 42, as depicted in FIG. 28. Subsequently,overall etch-back is performed by dry etching and the shapes of theresists 40B and 40C are transferred onto the high refractive index layer40A, thereby forming the in-layer lens layer 40 as depicted in FIG. 29.It is to be noted that examples of types of etching gas used for etchinginclude fluorocarbon gas such as CF₄ and C₄F₈ and O₂.

Next, as depicted in FIG. 30, the transparent planarization layer 50 isformed on the in-layer lens layer 40. The planarization layer 50 isformed by stacking SiO₂ by, for example, a plasma CVD method. Since anSiO₂ film formed by the CVD conforms to a step of a based material to beformed, the formed SiO₂ film has a surface shape reflective of theirregular shape of the in-layer lens layer 40. Furthermore, theplanarization layer 50 may be formed by forming a thermoplastic resinfilm by a spin coating method and then performing a thermosettingtreatment. The SiO₂ film formed by the spin coating method and havingthe surface shape reflective of the irregular shape of the in-layer lenslayer 40 to some extent is formed. Planarizing the SiO₂ film formed inthis way by chemical mechanical polishing enables formation of theplanarization layer 50 having the generally planarized surface. At thistime, the projections as the in-layer lenses 41 and the structures 42are formed generally entirely on the in-layer lens layer 40; thus, thereis no large step near the boundary between the imaging device region R1and the other regions in the surface shape of the SiO₂ film, and a stepthat could influence yield does not remain near the boundary.

Next, as depicted in FIG. 31, the color filter layer 60 is formed on theplanarization layer 50. Examples of the color filter layer 60 include acolor filter layer in which filters of primary colors of green, red, andblue are arranged in a Bayer array. The color filters of the colorfilter layer 60 are not limited to those of the three primary colors oflight described above and color filters of complementary colors may beused or a combination of the color filters and white color filters canbe used as the color filters. An additional planarization layer may beprovided on an upper surface of the color filter layer 60 as needed.

Next, as depicted in FIG. 32, the on-chip lens layer 70 is formed on thecolor filter layer 60. The on-chip lens layer 70 is formed by, forexample, forming a positive photoresist film on the color filter layer60 and processing the positive photoresist film by the photolithography.

Through the processes described above, a work substrate W on which aplurality of solid-state imaging devices 100 are formed is produced asdepicted in FIG. 33. Scribe lines SL for dividing the work substrate 100into the solid-state imaging devices 100 by dicing are formed lengthwiseand crosswise, and the imaging device region R1 and the peripheralcircuit region R2 within a rectangular region surrounded by the scribelines SL and a partially frame-shaped region of the scribe region R3surrounding the imaging device region R1 and the peripheral circuitregion R2 are divided as each solid-state imaging device 100. It is tobe noted that the scribe region R3 within the rectangular regionsurrounded by the scribe lines SL often contains a TEG region R4separated and divided from the solid-state imaging device 100. In thiscase, the structures 42 similar to those in the peripheral circuitregion R2 are also formed on the in-layer lens layer 40 in the TEGregion R4. By the manufacturing method described above, the solid-stateimaging device 100 according to the first embodiment described above canbe manufactured.

(C) Third Embodiment

FIG. 34 is a block diagram depicting a configuration of an imagingapparatus 300 including the solid-state imaging device 100. The imagingapparatus 300 depicted in FIG. 34 is an example of an electronicapparatus.

It is to be noted that the imaging apparatus refers to any of entireelectronic apparatuses using the solid-state imaging device in an imagecapture section (photoelectric conversion section) such as imagingapparatuses including a digital still camera and a digital video cameraand mobile terminal apparatuses including a mobile telephone having animaging function. Needless to say, examples of the electronic apparatususing the solid-state imaging device in the image capture sectioninclude a copying machine using the solid-state imaging device in animage read section. Furthermore, the imaging apparatus including thesolid-state imaging device may be modularized so that the imagingapparatus is mounted in the electronic apparatus described above.

In FIG. 34, the imaging apparatus 300 includes an optical system 311including a lens group, the solid-state imaging device 100, a digitalsignal processor (DSP) 313 that serves as a signal processing circuitwhich processes an output signal from the solid-state imaging device100, a frame memory 314, a display section 315, a recording section 316,an operation system 317, a power supply system 318, and a controlsection 319.

The DSP 313, the frame memory 314, the display section 315, therecording section 316, the operation system 317, the power supplysection 318, and the control section 319 are connected via acommunication bus so that the frame memory 314, the display section 315,the recording section 316, the operation system 317, the power supplysection 318, and the control section 319 can mutually transmit andreceive data and signals.

The optical system 311 captures incident light (image light) from asubject and forms an image on an imaging surface of the solid-stateimaging device 100. The solid-state imaging device 100 generates anelectrical signal in response to an amount of the received incidentlight imaged on the imaging surface by the optical system 311 per pixeland outputs the electrical signal as a pixel signal. This pixel signalis input to the DSP 313, and image data generated by performing variousimage processes on the pixel signal as appropriate is stored in theframe memory 314, recorded in a recording medium of the recordingsection 316, or output to the display section 315.

The display section 315 is configured with a panel type display devicesuch as a liquid crystal display device or an organic electroluminescence (EL) display device, and displays a moving image and astill image captured by the solid-state imaging device 100 and otherinformation. The recording section 316 records the moving image and thestill image captured by the solid-state imaging device 100 in arecording medium such as a digital versatile disk (DVD), a hard disk(HD), or a semiconductor memory.

The operation system 317 receives various operations from a user andtransmits operation commands in response to the user's operations to thesections 313, 314, 315, 316, 318, and 319 via the communication bus. Thepower supply system 318 generates various power supply voltages that actas driving power and supplies the generated power supply voltages toobjects to be supplied (the sections 312, 313, 314, 315, 316, 317, and319) as appropriate.

The control section 319 includes a CPU that performs an arithmeticprocess, a ROM that stores a control program for the imaging apparatus300, a RAM that functions as a work area of the CPU, and the like. Thecontrol section 319 controls the sections 313, 314, 315, 316, 317, and318 by causing the CPU to execute the control program stored in the ROMwhile using the RAM as the work area. Furthermore, the control section319 controls the timing generator, which is not depicted, to generatevarious timing signals, and exercises control to supply the timingsignals to the sections.

(D) Example of Application to Endoscopic Surgery System

The technology according to the present disclosure can be applied tovarious products. For example, the technology according to the presentdisclosure may be applied to an endoscopic surgery system.

FIG. 35 is a view depicting an example of a schematic configuration ofan endoscopic surgery system to which the technology according to anembodiment of the present disclosure (present technology) can beapplied.

In FIG. 35, a state is illustrated in which a surgeon (medical doctor)11131 is using an endoscopic surgery system 11000 to perform surgery fora patient 11132 on a patient bed 11133. As depicted, the endoscopicsurgery system 11000 includes an endoscope 11100, other surgical tools11110 such as a pneumoperitoneum tube 11111 and an energy device 11112,a supporting arm apparatus 11120 which supports the endoscope 11100thereon, and a cart 11200 on which various apparatus for endoscopicsurgery are mounted.

The endoscope 11100 includes a lens barrel 11101 having a region of apredetermined length from a distal end thereof to be inserted into abody cavity of the patient 11132, and a camera head 11102 connected to aproximal end of the lens barrel 11101. In the example depicted, theendoscope 11100 is depicted which includes as a rigid endoscope havingthe lens barrel 11101 of the hard type. However, the endoscope 11100 mayotherwise be included as a flexible endoscope having the lens barrel11101 of the flexible type.

The lens barrel 11101 has, at a distal end thereof, an opening in whichan objective lens is fitted. A light source apparatus 11203 is connectedto the endoscope 11100 such that light generated by the light sourceapparatus 11203 is introduced to a distal end of the lens barrel 11101by a light guide extending in the inside of the lens barrel 11101 and isirradiated toward an observation target in a body cavity of the patient11132 through the objective lens. It is to be noted that the endoscope11100 may be a forward-viewing endoscope or may be an oblique-viewingendoscope or a side-viewing endoscope.

An optical system and an image pickup element are provided in the insideof the camera head 11102 such that reflected light (observation light)from the observation target is condensed on the image pickup element bythe optical system. The observation light is photo-electricallyconverted by the image pickup element to generate an electric signalcorresponding to the observation light, namely, an image signalcorresponding to an observation image. The image signal is transmittedas RAW data to a CCU 11201.

The CCU 11201 includes a central processing unit (CPU), a graphicsprocessing unit (GPU) or the like and integrally controls operation ofthe endoscope 11100 and a display apparatus 11202. Further, the CCU11201 receives an image signal from the camera head 11102 and performs,for the image signal, various image processes for displaying an imagebased on the image signal such as, for example, a development process(demosaic process).

The display apparatus 11202 displays thereon an image based on an imagesignal, for which the image processes have been performed by the CCU11201, under the control of the CCU 11201.

The light source apparatus 11203 includes a light source such as, forexample, a light emitting diode (LED) and supplies irradiation lightupon imaging of a surgical region to the endoscope 11100.

An inputting apparatus 11204 is an input interface for the endoscopicsurgery system 11000. A user can perform inputting of various kinds ofinformation or instruction inputting to the endoscopic surgery system11000 through the inputting apparatus 11204. For example, the user wouldinput an instruction or a like to change an image pickup condition (typeof irradiation light, magnification, focal distance or the like) by theendoscope 11100.

A treatment tool controlling apparatus 11205 controls driving of theenergy device 11112 for cautery or incision of a tissue, sealing of ablood vessel or the like. A pneumoperitoneum apparatus 11206 feeds gasinto a body cavity of the patient 11132 through the pneumoperitoneumtube 11111 to inflate the body cavity in order to secure the field ofview of the endoscope 11100 and secure the working space for thesurgeon. A recorder 11207 is an apparatus capable of recording variouskinds of information relating to surgery. A printer 11208 is anapparatus capable of printing various kinds of information relating tosurgery in various forms such as a text, an image or a graph.

It is to be noted that the light source apparatus 11203 which suppliesirradiation light when a surgical region is to be imaged to theendoscope 11100 may include a white light source which includes, forexample, an LED, a laser light source or a combination of them. Where awhite light source includes a combination of red, green, and blue (RGB)laser light sources, since the output intensity and the output timingcan be controlled with a high degree of accuracy for each color (eachwavelength), adjustment of the white balance of a picked up image can beperformed by the light source apparatus 11203. Further, in this case, iflaser beams from the respective RGB laser light sources are irradiatedtime-divisionally on an observation target and driving of the imagepickup elements of the camera head 11102 are controlled in synchronismwith the irradiation timings. Then images individually corresponding tothe R, G and B colors can be also picked up time-divisionally. Accordingto this method, a color image can be obtained even if color filters arenot provided for the image pickup element.

Further, the light source apparatus 11203 may be controlled such thatthe intensity of light to be outputted is changed for each predeterminedtime. By controlling driving of the image pickup element of the camerahead 11102 in synchronism with the timing of the change of the intensityof light to acquire images time-divisionally and synthesizing theimages, an image of a high dynamic range free from underexposed blockedup shadows and overexposed highlights can be created.

Further, the light source apparatus 11203 may be configured to supplylight of a predetermined wavelength band ready for special lightobservation. In special light observation, for example, by utilizing thewavelength dependency of absorption of light in a body tissue toirradiate light of a narrow band in comparison with irradiation lightupon ordinary observation (namely, white light), narrow band observation(narrow band imaging) of imaging a predetermined tissue such as a bloodvessel of a superficial portion of the mucous membrane or the like in ahigh contrast is performed. Alternatively, in special light observation,fluorescent observation for obtaining an image from fluorescent lightgenerated by irradiation of excitation light may be performed. Influorescent observation, it is possible to perform observation offluorescent light from a body tissue by irradiating excitation light onthe body tissue (autofluorescence observation) or to obtain afluorescent light image by locally injecting a reagent such asindocyanine green (ICG) into a body tissue and irradiating excitationlight corresponding to a fluorescent light wavelength of the reagentupon the body tissue. The light source apparatus 11203 can be configuredto supply such narrow-band light and/or excitation light suitable forspecial light observation as described above.

FIG. 36 is a block diagram depicting an example of a functionalconfiguration of the camera head 11102 and the CCU 11201 depicted inFIG. 35.

The camera head 11102 includes a lens unit 11401, an image pickup unit11402, a driving unit 11403, a communication unit 11404 and a camerahead controlling unit 11405. The CCU 11201 includes a communication unit11411, an image processing unit 11412 and a control unit 11413. Thecamera head 11102 and the CCU 11201 are connected for communication toeach other by a transmission cable 11400.

The lens unit 11401 is an optical system, provided at a connectinglocation to the lens barrel 11101. Observation light taken in from adistal end of the lens barrel 11101 is guided to the camera head 11102and introduced into the lens unit 11401. The lens unit 11401 includes acombination of a plurality of lenses including a zoom lens and afocusing lens.

The image pickup unit 11402 includes image pickup elements. The numberof image pickup elements which is included by the image pickup unit11402 may be one (single-plate type) or a plural number (multi-platetype). Where the image pickup unit 11402 is configured as that of themulti-plate type, for example, image signals corresponding to respectiveR, G and B are generated by the image pickup elements, and the imagesignals may be synthesized to obtain a color image. The image pickupunit 11402 may also be configured so as to have a pair of image pickupelements for acquiring respective image signals for the right eye andthe left eye ready for three dimensional (3D) display. If 3D display isperformed, then the depth of a living body tissue in a surgical regioncan be comprehended more accurately by the surgeon 11131. It is to benoted that, where the image pickup unit 11402 is configured as that ofstereoscopic type, a plurality of systems of lens units 11401 areprovided corresponding to the individual image pickup elements.

Further, the image pickup unit 11402 may not necessarily be provided onthe camera head 11102. For example, the image pickup unit 11402 may beprovided immediately behind the objective lens in the inside of the lensbarrel 11101.

The driving unit 11403 includes an actuator and moves the zoom lens andthe focusing lens of the lens unit 11401 by a predetermined distancealong an optical axis under the control of the camera head controllingunit 11405. Consequently, the magnification and the focal point of apicked up image by the image pickup unit 11402 can be adjusted suitably.

The communication unit 11404 includes a communication apparatus fortransmitting and receiving various kinds of information to and from theCCU 11201. The communication unit 11404 transmits an image signalacquired from the image pickup unit 11402 as RAW data to the CCU 11201through the transmission cable 11400.

In addition, the communication unit 11404 receives a control signal forcontrolling driving of the camera head 11102 from the CCU 11201 andsupplies the control signal to the camera head controlling unit 11405.The control signal includes information relating to image pickupconditions such as, for example, information that a frame rate of apicked up image is designated, information that an exposure value uponimage picking up is designated and/or information that a magnificationand a focal point of a picked up image are designated.

It is to be noted that the image pickup conditions such as the framerate, exposure value, magnification or focal point may be designated bythe user or may be set automatically by the control unit 11413 of theCCU 11201 on the basis of an acquired image signal. In the latter case,an auto exposure (AE) function, an auto focus (AF) function and an autowhite balance (AWB) function are incorporated in the endoscope 11100.

The camera head controlling unit 11405 controls driving of the camerahead 11102 on the basis of a control signal from the CCU 11201 receivedthrough the communication unit 11404.

The communication unit 11411 includes a communication apparatus fortransmitting and receiving various kinds of information to and from thecamera head 11102. The communication unit 11411 receives an image signaltransmitted thereto from the camera head 11102 through the transmissioncable 11400.

Further, the communication unit 11411 transmits a control signal forcontrolling driving of the camera head 11102 to the camera head 11102.The image signal and the control signal can be transmitted by electricalcommunication, optical communication or the like.

The image processing unit 11412 performs various image processes for animage signal in the form of RAW data transmitted thereto from the camerahead 11102.

The control unit 11413 performs various kinds of control relating toimage picking up of a surgical region or the like by the endoscope 11100and display of a picked up image obtained by image picking up of thesurgical region or the like. For example, the control unit 11413 createsa control signal for controlling driving of the camera head 11102.

Further, the control unit 11413 controls, on the basis of an imagesignal for which image processes have been performed by the imageprocessing unit 11412, the display apparatus 11202 to display a pickedup image in which the surgical region or the like is imaged. Thereupon,the control unit 11413 may recognize various objects in the picked upimage using various image recognition technologies. For example, thecontrol unit 11413 can recognize a surgical tool such as forceps, aparticular living body region, bleeding, mist when the energy device11112 is used and so forth by detecting the shape, color and so forth ofedges of objects included in a picked up image. The control unit 11413may cause, when it controls the display apparatus 11202 to display apicked up image, various kinds of surgery supporting information to bedisplayed in an overlapping manner with an image of the surgical regionusing a result of the recognition. Where surgery supporting informationis displayed in an overlapping manner and presented to the surgeon11131, the burden on the surgeon 11131 can be reduced and the surgeon11131 can proceed with the surgery with certainty.

The transmission cable 11400 which connects the camera head 11102 andthe CCU 11201 to each other is an electric signal cable ready forcommunication of an electric signal, an optical fiber ready for opticalcommunication or a composite cable ready for both of electrical andoptical communications.

Here, while, in the example depicted, communication is performed bywired communication using the transmission cable 11400, thecommunication between the camera head 11102 and the CCU 11201 may beperformed by wireless communication.

An example of the endoscopic surgery system to which the technologyaccording to the present disclosure can be applied has been describedabove. The technology according to the present disclosure can be appliedto the image pickup unit 11402 of the camera head 11102 among theconfigurations described above. Specifically, the solid-state imagingdevice 100 of FIG. 1 can be applied to the image pickup unit 10402.Applying the technology according to the present disclosure to the imagepickup unit 10402 makes it possible to suppress occurrence of avariation in light condensing characteristics among the on-chip lensesresulting from providing the in-layer lenses while preventing thedeterioration of the device characteristics and the reduction of yield.Since a clearer surgical region image can be obtained, the surgeon canconfirm the surgical region with certainty.

While the endoscopic surgery system has been described herein as anexample, the technology according to the present disclosure may beapplied to the other system, for example, a microscopic surgery system.

(E) Example of Application to Mobile Body

The technology according to the present disclosure can be applied tovarious products. For example, the technology according to the presentdisclosure may be implemented as a device mounted in a mobile body ofany of kinds such as a vehicle, an electric-powered vehicle, a hybridelectric-powered vehicle, a two-wheeled vehicle, a bicycle, a personalmobility, an airplane, a drone, a ship, and a robot.

FIG. 37 is a block diagram depicting an example of schematicconfiguration of a vehicle control system as an example of a mobile bodycontrol system to which the technology according to an embodiment of thepresent disclosure can be applied.

The vehicle control system 12000 includes a plurality of electroniccontrol units connected to each other via a communication network 12001.In the example depicted in FIG. 37, the vehicle control system 12000includes a driving system control unit 12010, a body system control unit12020, an outside-vehicle information detecting unit 12030, anin-vehicle information detecting unit 12040, and an integrated controlunit 12050. In addition, a microcomputer 12051, a sound/image outputsection 12052, and a vehicle-mounted network interface (I/F) 12053 areillustrated as a functional configuration of the integrated control unit12050.

The driving system control unit 12010 controls the operation of devicesrelated to the driving system of the vehicle in accordance with variouskinds of programs. For example, the driving system control unit 12010functions as a control device for a driving force generating device forgenerating the driving force of the vehicle, such as an internalcombustion engine, a driving motor, or the like, a driving forcetransmitting mechanism for transmitting the driving force to wheels, asteering mechanism for adjusting the steering angle of the vehicle, abraking device for generating the braking force of the vehicle, and thelike.

The body system control unit 12020 controls the operation of variouskinds of devices provided to a vehicle body in accordance with variouskinds of programs. For example, the body system control unit 12020functions as a control device for a keyless entry system, a smart keysystem, a power window device, or various kinds of lamps such as aheadlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or thelike. In this case, radio waves transmitted from a mobile device as analternative to a key or signals of various kinds of switches can beinput to the body system control unit 12020. The body system controlunit 12020 receives these input radio waves or signals, and controls adoor lock device, the power window device, the lamps, or the like of thevehicle.

The outside-vehicle information detecting unit 12030 detects informationabout the outside of the vehicle including the vehicle control system12000. For example, the outside-vehicle information detecting unit 12030is connected with an imaging section 12031. The outside-vehicleinformation detecting unit 12030 makes the imaging section 12031 imagean image of the outside of the vehicle, and receives the imaged image.On the basis of the received image, the outside-vehicle informationdetecting unit 12030 may perform processing of detecting an object suchas a human, a vehicle, an obstacle, a sign, a character on a roadsurface, or the like, or processing of detecting a distance thereto.

The imaging section 12031 is an optical sensor that receives light, andwhich outputs an electric signal corresponding to a received lightamount of the light. The imaging section 12031 can output the electricsignal as an image, or can output the electric signal as informationabout a measured distance. In addition, the light received by theimaging section 12031 may be visible light, or may be invisible lightsuch as infrared rays or the like.

The in-vehicle information detecting unit 12040 detects informationabout the inside of the vehicle. The in-vehicle information detectingunit 12040 is, for example, connected with a driver state detectingsection 12041 that detects the state of a driver. The driver statedetecting section 12041, for example, includes a camera that images thedriver. On the basis of detection information input from the driverstate detecting section 12041, the in-vehicle information detecting unit12040 may calculate a degree of fatigue of the driver or a degree ofconcentration of the driver, or may determine whether the driver isdozing.

The microcomputer 12051 can calculate a control target value for thedriving force generating device, the steering mechanism, or the brakingdevice on the basis of the information about the inside or outside ofthe vehicle which information is obtained by the outside-vehicleinformation detecting unit 12030 or the in-vehicle information detectingunit 12040, and output a control command to the driving system controlunit 12010. For example, the microcomputer 12051 can perform cooperativecontrol intended to implement functions of an advanced driver assistancesystem (ADAS) which functions include collision avoidance or shockmitigation for the vehicle, following driving based on a followingdistance, vehicle speed maintaining driving, a warning of collision ofthe vehicle, a warning of deviation of the vehicle from a lane, or thelike.

In addition, the microcomputer 12051 can perform cooperative controlintended for automatic driving, which makes the vehicle to travelautonomously without depending on the operation of the driver, or thelike, by controlling the driving force generating device, the steeringmechanism, the braking device, or the like on the basis of theinformation about the outside or inside of the vehicle which informationis obtained by the outside-vehicle information detecting unit 12030 orthe in-vehicle information detecting unit 12040.

In addition, the microcomputer 12051 can output a control command to thebody system control unit 12020 on the basis of the information about theoutside of the vehicle which information is obtained by theoutside-vehicle information detecting unit 12030. For example, themicrocomputer 12051 can perform cooperative control intended to preventa glare by controlling the headlamp so as to change from a high beam toa low beam, for example, in accordance with the position of a precedingvehicle or an oncoming vehicle detected by the outside-vehicleinformation detecting unit 12030.

The sound/image output section 12052 transmits an output signal of atleast one of a sound and an image to an output device capable ofvisually or auditorily notifying information to an occupant of thevehicle or the outside of the vehicle. In the example of FIG. 37, anaudio speaker 12061, a display section 12062, and an instrument panel12063 are illustrated as the output device. The display section 12062may, for example, include at least one of an on-board display and ahead-up display.

FIG. 38 is a diagram depicting an example of the installation positionof the imaging section 12031.

In FIG. 38, the imaging section 12031 includes imaging sections 12101,12102, 12103, 12104, and 12105.

The imaging sections 12101, 12102, 12103, 12104, and 12105 are, forexample, disposed at positions on a front nose, sideview mirrors, a rearbumper, and a back door of the vehicle 12100 as well as a position on anupper portion of a windshield within the interior of the vehicle. Theimaging section 12101 provided to the front nose and the imaging section12105 provided to the upper portion of the windshield within theinterior of the vehicle obtain mainly an image of the front of thevehicle 12100. The imaging sections 12102 and 12103 provided to thesideview mirrors obtain mainly an image of the sides of the vehicle12100. The imaging section 12104 provided to the rear bumper or the backdoor obtains mainly an image of the rear of the vehicle 12100. Theimages of the front obtained by the imaging sections 12101 and 12105 areused mainly to detect a preceding vehicle, a pedestrian, an obstacle, asignal, a traffic sign, a lane, or the like.

Incidentally, FIG. 38 depicts an example of photographing ranges of theimaging sections 12101 to 12104. An imaging range 12111 represents theimaging range of the imaging section 12101 provided to the front nose.Imaging ranges 12112 and 12113 respectively represent the imaging rangesof the imaging sections 12102 and 12103 provided to the sideviewmirrors. An imaging range 12114 represents the imaging range of theimaging section 12104 provided to the rear bumper or the back door. Abird's-eye image of the vehicle 12100 as viewed from above is obtainedby superimposing image data imaged by the imaging sections 12101 to12104, for example.

At least one of the imaging sections 12101 to 12104 may have a functionof obtaining distance information. For example, at least one of theimaging sections 12101 to 12104 may be a stereo camera constituted of aplurality of imaging elements, or may be an imaging element havingpixels for phase difference detection.

For example, the microcomputer 12051 can determine a distance to eachthree-dimensional object within the imaging ranges 12111 to 12114 and atemporal change in the distance (relative speed with respect to thevehicle 12100) on the basis of the distance information obtained fromthe imaging sections 12101 to 12104, and thereby extract, as a precedingvehicle, a nearest three-dimensional object in particular that ispresent on a traveling path of the vehicle 12100 and which travels insubstantially the same direction as the vehicle 12100 at a predeterminedspeed (for example, equal to or more than 0 km/hour). Further, themicrocomputer 12051 can set a following distance to be maintained infront of a preceding vehicle in advance, and perform automatic brakecontrol (including following stop control), automatic accelerationcontrol (including following start control), or the like. It is thuspossible to perform cooperative control intended for automatic drivingthat makes the vehicle travel autonomously without depending on theoperation of the driver or the like.

For example, the microcomputer 12051 can classify three-dimensionalobject data on three-dimensional objects into three-dimensional objectdata of a two-wheeled vehicle, a standard-sized vehicle, a large-sizedvehicle, a pedestrian, a utility pole, and other three-dimensionalobjects on the basis of the distance information obtained from theimaging sections 12101 to 12104, extract the classifiedthree-dimensional object data, and use the extracted three-dimensionalobject data for automatic avoidance of an obstacle. For example, themicrocomputer 12051 identifies obstacles around the vehicle 12100 asobstacles that the driver of the vehicle 12100 can recognize visuallyand obstacles that are difficult for the driver of the vehicle 12100 torecognize visually. Then, the microcomputer 12051 determines a collisionrisk indicating a risk of collision with each obstacle. In a situationin which the collision risk is equal to or higher than a set value andthere is thus a possibility of collision, the microcomputer 12051outputs a warning to the driver via the audio speaker 12061 or thedisplay section 12062, and performs forced deceleration or avoidancesteering via the driving system control unit 12010. The microcomputer12051 can thereby assist in driving to avoid collision.

At least one of the imaging sections 12101 to 12104 may be an infraredcamera that detects infrared rays. The microcomputer 12051 can, forexample, recognize a pedestrian by determining whether or not there is apedestrian in imaged images of the imaging sections 12101 to 12104. Suchrecognition of a pedestrian is, for example, performed by a procedure ofextracting characteristic points in the imaged images of the imagingsections 12101 to 12104 as infrared cameras and a procedure ofdetermining whether or not it is the pedestrian by performing patternmatching processing on a series of characteristic points representingthe contour of the object. When the microcomputer 12051 determines thatthere is a pedestrian in the imaged images of the imaging sections 12101to 12104, and thus recognizes the pedestrian, the sound/image outputsection 12052 controls the display section 12062 so that a squarecontour line for emphasis is displayed so as to be superimposed on therecognized pedestrian. The sound/image output section 12052 may alsocontrol the display section 12062 so that an icon or the likerepresenting the pedestrian is displayed at a desired position.

An example of the vehicle control system to which the technologyaccording to the present disclosure can be applied has been describedabove. The technology according to the present disclosure can be appliedto the imaging section 12031 or the like among the configurationsdescribed above. Specifically, the solid-state imaging device 100 ofFIG. 1 can be applied to the imaging section 12031 or the like. Applyingthe technology according to the present disclosure to the imagingsection 12031 makes it possible to suppress occurrence of a variation inlight condensing characteristics among the on-chip lenses resulting fromproviding the in-layer lenses while preventing the deterioration of thedevice characteristics and the reduction of yield. Since a capturedimage easier to see can be obtained, it is possible to lessen driver'sfatigue.

It is to be noted that the present technology is not limited to theembodiments described above but include a configuration such that theconfigurations disclosed in the above embodiments are mutually replacedor that a combination of the configurations is changed, a configurationsuch that the configurations disclosed in the well-known technologiesand in the above embodiments are mutually replaced or that a combinationof the configurations is changed, and the like. Furthermore, a technicalscope of the present technology is not limited to the embodimentsdescribed above but encompasses matters set forth in claims andequivalents therefor.

Furthermore, the present technology can be configured as follows.

(1) A solid-state imaging device including:

a semiconductor substrate on which a plurality of photoelectricconversion devices are arranged in an imaging device region in atwo-dimensional array; and a stacked body formed by stacking a pluralityof layers on the semiconductor substrate, in which

the stacked body includes an in-layer lens layer that has in-layerlenses each provided at a position corresponding to each of thephotoelectric conversion devices; a planarization layer that is stackedon the in-layer lens layer and that has a generally planarized surface;and an on-chip lens layer that is an upper layer than the planarizationlayer and that has on-chip lenses each provided at a positioncorresponding to each of the photoelectric conversion devices, and

the in-layer lens layer has a plurality of structures at a heightgenerally equal to a height of the in-layer lenses, the plurality ofstructures being provided on an outside of the imaging device region.

(2) The solid-state imaging device according to (1) or (2), in which

the structures are provided generally entirely on the outside of theimaging device region.

(3) The solid-state imaging device according to any one of (1) and (2),in which

the structures are not provided in a site where a positioning mark isprovided on a lower layer than the in-layer lens layer.

(4) The solid-state imaging device according to any one of (1) to (3),in which

the structures are provided at positions at which cross-sections of thestructures do not appear on a scribed section of the solid-state imagingdevice.

(5) The solid-state imaging device according to any one of (1) to (4),in which

the structures are generally identical in shape to the in-layer lens.

(6) The solid-state imaging device according to any one of (1) to (5),in which

the structures differ in shape from the in-layer lens.

(7) The solid-state imaging device according to any one of (1) to (6),in which

the structures are provided at pitches generally equivalent to pitchesof the in-layer lenses in the in-layer lens layer.

(8) The solid-state imaging device according to any one of (1) to (6),in which

the structures are provided at pitches different from pitches of thein-layer lenses in the in-layer lens layer.

(9) An imaging apparatus including: a solid-state imaging device; and asignal processing circuit that processes a signal from the solid-stateimaging device, in which

the solid-state imaging device includes a semiconductor substrate onwhich a plurality of photoelectric conversion devices are arranged in animaging device region in a two-dimensional array; and a stacked bodyformed by stacking a plurality of layers on the semiconductor substrate,

the stacked body includes an in-layer lens layer that has in-layerlenses each provided at a position corresponding to each of thephotoelectric conversion devices; a planarization layer that is stackedon the in-layer lens layer and that has a generally planarized surface;and an on-chip lens layer that is an upper layer than the planarizationlayer and that has on-chip lenses each provided at a positioncorresponding to each of the photoelectric conversion devices, and

the in-layer lens layer has a plurality of structures at a heightgenerally equal to a height of the in-layer lenses, the plurality ofstructures being provided on an outside of the imaging device region.

(10) A method of manufacturing a solid-state imaging device, including:

a first step of forming a plurality of photoelectric conversion devicesin an imaging device region of a semiconductor substrate in atwo-dimensional array; and

a second step of forming a plurality of layers by stacking on another onthe semiconductor substrate, in which

the second step includes: a step of forming an in-layer lens layer thathas in-layer lenses each at a position corresponding to each of thephotoelectric conversion devices; a step of forming a planarizationlayer having a generally planarized surface on the in-layer lens layer;and a step of forming an on-chip lens layer that is an upper layer thanthe planarization layer and that has on-chip lenses each at a positioncorresponding to each of the photoelectric conversion devices, and

in the step of forming the in-layer lens layer, a plurality ofstructures at a height generally equal to a height of the in-layerlenses are formed on an outside of the imaging device region.

REFERENCE SIGNS LIST

10 . . . Semiconductor substrate, 10F . . . Front surface, 10R . . .Rear surface, 11 . . . Unit pixel, 20 . . . Interconnection layer, 21 .. . Supporting substrate, 30 . . . Stacked body, 40 . . . In-layer lenslayer, 40A . . . High refractive index layer, 40B . . . Resist, 40C . .. Resist, 41 . . . In-layer lens, 42 . . . Structure, 50 . . .Planarization layer, 60 . . . Color filter layer, 61 . . . Color filter,70 . . . On-chip lens layer, 71 . . . On-chip lens, 100 . . .Solid-state imaging device, 121 . . . Pixel section, 122 . . . Verticaldriving section, 123 . . . Analog-digital conversion section (ADconversion section), 123 a . . . Comparator, 123 b . . . Counter, 123 c. . . Latch, 124 . . . Reference signal generation section, 125 . . .Horizontal driving section, 126 . . . Timing control section, 127 . . .Signal processing section, 300 . . . Imaging apparatus, 311 . . .Optical system, 313 . . . DSP, 314 . . . Frame memory, 315 . . . Displaysection, 316 . . . Recording section, 317 . . . Operation system, 318 .. . Power supply system, 319 . . . Control section, 11402 . . . Imagepickup unit, 12031 . . . Imaging section, 12101 to 12105 . . . Imagingsection, FD . . . Floating diffusion, HSLn . . . Pixel driving line,Lrst . . . Signal line, Lsel . . . Signal line, Ltrf . . . Horizontalsignal line, Ltrg . . . Signal line, M . . . Positioning mark, PD . . .Photodiode, PXL . . . Pixel, R1 . . . Imaging device region, R2 . . .Peripheral circuit region, R3 . . . Scribe region, R4 . . . TEG region,SL ... Scribe line, T1 . . . Input terminal, T2 . . . Input terminal, T3. . . Output terminal, TR1 . . . Transfer transistor, TR2 . . . Resettransistor, TR3 . . . Amplification transistor, TR4 . . . Selectiontransistor, VSLm . . . Vertical signal line, W . . . Work substrate

1. A solid-state imaging device comprising: a semiconductor substrate onwhich a plurality of photoelectric conversion devices are arranged in animaging device region in a two-dimensional array; and a stacked bodyformed by stacking a plurality of layers on the semiconductor substrate,wherein the stacked body includes an in-layer lens layer that hasin-layer lenses each provided at a position corresponding to each of thephotoelectric conversion devices; a planarization layer that is stackedon the in-layer lens layer and that has a generally planarized surface;and an on-chip lens layer that is an upper layer than the planarizationlayer and that has on-chip lenses each provided at a positioncorresponding to each of the photoelectric conversion devices, and thein-layer lens layer has a plurality of structures at a height generallyequal to a height of the in-layer lenses, the plurality of structuresbeing provided on an outside of the imaging device region.
 2. Thesolid-state imaging device according to claim 1, wherein the structuresare provided generally entirely on the outside of the imaging deviceregion.
 3. The solid-state imaging device according to claim 1, whereinthe structures are not provided in a site where a positioning mark isprovided on a lower layer than the in-layer lens layer.
 4. Thesolid-state imaging device according to claim 1, wherein the structuresare provided at positions at which cross-sections of the structures donot appear on a scribed section of the solid-state imaging device. 5.The solid-state imaging device according to claim 1, wherein thestructures are generally identical in shape to the in-layer lens.
 6. Thesolid-state imaging device according to claim 1, wherein the structuresdiffer in shape from the in-layer lens.
 7. The solid-state imagingdevice according to claim 1, wherein the structures are provided atpitches generally equivalent to pitches of the in-layer lenses in thein-layer lens layer.
 8. The solid-state imaging device according toclaim 1, wherein the structures are provided at pitches different frompitches of the in-layer lenses in the in-layer lens layer.
 9. An imagingapparatus comprising: a solid-state imaging device; and a signalprocessing circuit that processes a signal from the solid-state imagingdevice, wherein the solid-state imaging device includes a semiconductorsubstrate on which a plurality of photoelectric conversion devices arearranged in an imaging device region in a two-dimensional array; and astacked body formed by stacking a plurality of layers on thesemiconductor substrate, the stacked body includes an in-layer lenslayer that has in-layer lenses each provided at a position correspondingto each of the photoelectric conversion devices; a planarization layerthat is stacked on the in-layer lens layer and that has a generallyplanarized surface; and an on-chip lens layer that is an upper layerthan the planarization layer and that has on-chip lenses each providedat a position corresponding to each of the photoelectric conversiondevices, and the in-layer lens layer has a plurality of structures at aheight generally equal to a height of the in-layer lenses, the pluralityof structures being provided on an outside of the imaging device region.10. A method of manufacturing a solid-state imaging device, comprising:a first step of forming a plurality of photoelectric conversion devicesin an imaging device region of a semiconductor substrate in atwo-dimensional array; and a second step of forming a plurality oflayers by stacking on another on the semiconductor substrate, whereinthe second step includes: a step of forming an in-layer lens layer thathas in-layer lenses each at a position corresponding to each of thephotoelectric conversion devices; a step of forming a planarizationlayer having a generally planarized surface on the in-layer lens layer;and a step of forming an on-chip lens layer that is an upper layer thanthe planarization layer and that has on-chip lenses each at a positioncorresponding to each of the photoelectric conversion devices, and inthe step of forming the in-layer lens layer, a plurality of structuresat a height generally equal to a height of the in-layer lenses areformed on an outside of the imaging device region.